Taiwan Semiconductor CorporationTaiwan, China
TSM061NA03CR
Single FETs, MOSFETsAll alternatives
View full reportTechnical parameters
| Power | |
|---|---|
| ID-最大漏极电流 | 88A |
| Id-额定电流 | 88A |
| VDSS-最大漏源电压 | 30V |
| Vgs(th)-门槛电压 | 2.5V |
| AC and DC characteristics | |
| RDS(on)-漏源导通阻抗 | 6.1mΩ |
| Ron-最大导通阻抗 | 6.1mΩ |
| Environment and package | |
| 封装类型1 | PDFN56 |
| 最大工作温度 | 150℃ |
| 最小工作温度 | -55℃ |
| Other | |
| Ciss-输入电容 | 1133pF |
| Ciss-输入等效电容 | 1133pF |
| Pd-功率耗散 | 78W |
| Pd-最大功率耗散 | 78W |
| Qg-栅极电荷 | 19nC |
| Vdss-漏源耐压 | 30V |
| Vgs-栅源耐压 | 20V |
| 内置ESD保护二极管 | 0 |
| 内置整流二极管 | 0 |
| 引脚数量1 | 8 |
| 集成ESD保护二极管 | 0 |
| 集成整流二极管 | 0 |
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