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Technical parameters

Key specs

TypePNP
Collector-emitter voltage160 V
Collector current18 AMax
DC current gain801A
Power180 WMax
Power
Current - Collector Cutoff (Max)1µA (ICBO)
Current - Collector (Ic) (Max)18 A
Power - Max180 W
Voltage - Collector Emitter Breakdown (Max)160 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 1A, 5V
Frequency - Transition30MHz
Environment and package
Mounting TypeThrough Hole
Operating Temperature150°C (TJ)
PackageBulk
Package / CaseTO-3PL
Supplier Device PackageTO-3P(L)
Other
Base Product NumberTTA0002
MfrToshiba Semiconductor and Storage
Product StatusActive
Series-
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic2V @ 900mA, 9A

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