Vishay General Semiconductor - Diodes DivisionUnited States
V2PM12LHM3/I
Single DiodesDIODE SCHOTTKY 120V 1.8A DO220AA
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Technical parameters
Key specs
Reverse voltage120 V
Average rectified current1.8 A
Forward voltage620 mVMax · 1 A
TypeSchottkyFast Recovery =< 500ns，> 200mA (Io)
| Power | |
|---|---|
| Current - Average Rectified (Io) | 1.8A |
| Current - Reverse Leakage @ Vr | 200 µA @ 120 V |
| Voltage - DC Reverse (Vr) (Max) | 120 V |
| Voltage - Forward (Vf) (Max) @ If | 620 mV @ 1 A |
| Environment and package | |
| Grade | Automotive |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction | -40°C ~ 175°C |
| Package / Case | DO-220AA |
| Qualification | AEC-Q101 |
| Supplier Device Package | DO-220AA (SMP) |
| Other | |
| Base Product Number | V2PM12 |
| Capacitance @ Vr, F | 180pF @ 4V, 1MHz |
| Mfr | Vishay General Semiconductor - Diodes Division |
| Packaging | Tape & Reel (TR) |
| Part Status | Active |
| Series | eSMP®, TMBS® |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | Schottky |