VBsemi(微碧半导体)China
SOP8;N+P—Channel沟道,±30V;15/-10.5A;RDS(ON)=7.2/17mΩ@VGS=10V,VGS=20V;Vth=1/-0.9~2.2/-2.5V;是一款双N 型和P型场效应晶体管,采用Trench技术,适用于多种电子领域和模块。
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Technical parameters
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