VBsemi(微碧半导体)China
TO252；P—Channel沟道,-60V；-35A；RDS(ON)=46mΩ@VGS=10V,VGS=20V；Vth=-1~-3V；
All alternatives
View full reportTechnical parameters
Key specs
ChannelP-channel
Drain-source voltage60 V
Continuous drain current20 A
Gate threshold voltage1 VMax
| Power | |
|---|---|
| 漏源电压(Vdss) | 60V |
| 连续漏极电流(Id) | 20A |
| 阈值电压(Vgs(th)) | 1V |
| Other | |
| 数量 | 1个P沟道 |