VBsemi(微碧半导体)China
台积电流片，长电科技封装；是一款单路N沟道MOSFET，采用Trench工艺，适用于多种电子电路模块的设计和应用。例如电源管理模块、电机驱动模块、LED照明控制模块等领域。SOP8；N—Channel沟道,30V；18A；RDS(ON)=4mΩ@VGS=10V,VGS=±20V；Vth=1~3V；
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Technical parameters
Key specs
ChannelN-channel
Drain-source voltage30 V
Continuous drain current17 A
| Power | |
|---|---|
| 漏源电压(Vdss) | 30V |
| 连续漏极电流(Id) | 17A |
| Other | |
| 数量 | 1个N沟道 |
| 耗散功率(Pd) | 2.5W |