VBsemi(微碧半导体)China
台积电流片，长电科技封装；是一款双通道功率场效应管，采用Trench工艺，适用于需要高功率和高耐压的应用场景，包括电源开关、电机控制、汽车电子和LED照明等领域的相关模块。SOP8；2个P—Channel沟道,-30V；-7.3A；RDS(ON)=35mΩ@VGS=10V,VGS=20V；Vth=-1~-3V；
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Technical parameters
Key specs
ChannelP-channel
Drain-source voltage30 V
Continuous drain current7.3 A
On-resistance39 mΩMax · 4.5V
| Power | |
|---|---|
| 漏源电压(Vdss) | 30V |
| 连续漏极电流(Id) | 7.3A |
| Other | |
| 导通电阻(RDS(on)) | 39mΩ@4.5V |
| 数量 | 2个P沟道 |