VBsemi(微碧半导体)China
VBZA4953A
Transistors - FETs, MOSFETs - SingleSOP8；2个P—Channel沟道；-30V；-6A；RDS(ON)=40mΩ@VGS=10V,VGS=±20V；Vth=-1~-3V；
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View full reportTechnical parameters
Key specs
ChannelP-channel
Drain-source voltage30 V
Gate threshold voltage1 VMax
| Power | |
|---|---|
| 漏源电压(Vdss) | 30V |
| 阈值电压(Vgs(th)) | 1V |
| Other | |
| 数量 | 2个P沟道 |
| 耗散功率(Pd) | 2.5W |