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Technical parameters

Power
ID-最大漏极电流140A
VDSS-最大漏源电压80V
Vgs(th)-门槛电压3.1V
AC and DC characteristics
RDS(on)-漏源导通阻抗3mΩ
Environment and package
封装类型1TO263
Other
Qg-栅极电荷232nC
Vgs-栅源耐压25V
内置ESD保护二极管0
内置整流二极管0
引脚数量16

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