Diodes IncorporatedUnited States
ZXMC3A16DN8Q
FET, MOSFET ArraysAll alternatives
View full reportTechnical parameters
| Power | |
|---|---|
| N管-ID最大漏极电流 | 6.4A |
| N管-Vdss漏源电压 | 30V |
| N管-Vgsth门槛电压 | 1V |
| P管-ID最大漏极电流 | 5.4A |
| P管-Vdss漏源电压 | 30V |
| P管-Vgsth门槛电压 | 1V |
| AC and DC characteristics | |
| N管-Rds最大导通阻抗 | 35mΩ |
| P管-Rds最大导通阻抗 | 48mΩ |
| Environment and package | |
| 封装类型1 | SO |
| 最大工作温度 | 150℃ |
| 最小工作温度 | -50℃ |
| Other | |
| N管-Qg栅极电荷 | 17.5nC |
| N管-Vgs最大值 | 20V |
| Pd-功率耗散 | 2.1mW |
| P管-Qg栅极电荷 | 24.9nC |
| P管-Vgs最大值 | 20V |
| 引脚数量1 | 8 |