VBsemi(微碧半导体)China
ZXMC6A09DN8TA-VB
Transistors - FETs, MOSFETs - SingleSOP8；N+P--Channel沟道,±60V；5.3/-4.9A；RDS(ON)=26/55mΩ@VGS=10V,VGS=20V；Vth=±1~±3；
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View full reportTechnical parameters
Key specs
Drain-source voltage60 V
Continuous drain current5.3 A
On-resistance29 mΩMax · 4.5V
| Power | |
|---|---|
| 漏源电压(Vdss) | 60V |
| 连续漏极电流(Id) | 5.3A |
| Other | |
| 导通电阻(RDS(on)) | 29mΩ@4.5V |
| 耗散功率(Pd) | 3.4W |