Diodes IncorporatedUnited States
MOSFET 2N-CH 30V 4.9A 8SOIC
All alternatives
View full reportTechnical parameters
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 4.9A |
| Drain to Source Voltage (Vdss) | 30V |
| Power - Max | 1.8W |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C~150°C(TJ) |
| Package | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SO |
| Other | |
| FET Feature | Logic Level Gate |
| FET Type | 2 N-Channel (Dual) |
| Gate Charge (Qg) (Max) @ Vgs | 17.5nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 796pF @ 25V |
| Mfr | Diodes Incorporated |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 9A, 10V |
| Series | - |
| Vgs(th) (Max) @ Id | 1V @ 250µA (Min) |
Documents
No documents are linked to this part yet.