Diodes IncorporatedUnited States
MOSFET 2N-CH 60V 2.5A 8-SOIC
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View full reportTechnical parameters
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 2.5A |
| Drain to Source Voltage (Vdss) | 60V |
| Power - Max | 1.8W |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C~150°C(TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SO |
| Other | |
| Base Product Number | ZXMN6A11 |
| FET Feature | Logic Level Gate |
| FET Type | 2 N-Channel (Dual) |
| Gate Charge (Qg) (Max) @ Vgs | 5.7nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 330pF @ 40V |
| Mfr | Diodes Incorporated |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 120mOhm @ 2.5A, 10V |
| Series | - |
| Vgs(th) (Max) @ Id | 1V @ 250µA (Min) |