Zhongke Wireless(中科无线)

Size: 13 x 15 x 2.1mm TX POWER=33 dBm Communication delay less than 5ms RF bandwidth: 1/2/4/8 MHz

CT3603 is a multi battery monitor that can measure up to 18 batteries connected in series, with a total measurement error (TME) of less than 3.0 mV. The wide battery measurement range ranges from 0V to 5.5V, making the device suitable for most battery chemistries such as NCM, LFP, sodium ion, and lead-acid batteries. All 18 units can be measured within 329 µ s, and a lower data acquisition rate can be selected to achieve higher noise reduction effect.

· Bidirectional blocking ability · GaN E-type HEMT technology · Ultra low on resistance

The CT3901 is designed to drive 40V~150V VGaNTM, E-type bidirectional GaN HEMT with a single gate and dual drain for low-voltage side battery protection in BMS systems. With its powerful driving capabilities, the CT3901 can drive multiple VGaNTMs in parallel within 50uSec. The input of the CT3901 is compatible with AFE/MCU logic and can withstand input logic voltages up to 20V. CT3901 is a dedicated driver for CT-UNITE 40V~150V VGaNTM with a gate drive voltage of 5V. The CT3901 has fast opening and closing speeds that respond to fault conditions to protect the system.

The CT3601 is an analog front-end chip with high-precision lithium battery monitoring and all-round safety protection, and low-side NMOS charge/discharge tube drive control, which is suitable for a variety of battery pack applications such as 10-17 strings of ternary lithium or lithium iron phosphate.

8mm×8mm LGA-15pin 6×GaN HEMT Suitable for high-performance robotic actuators

CT-1908 is a 100V, 150A half bridge SolidGaN in a compact 9mm × 9mm LGA package. The package includes six high-performance enhanced GaN FETs, drivers, gate resistors, and driver power capacitors, providing the industry's most compact and efficient GaN power solution.

CT-1906 V1.1 is a 100V, 60A three-phase enhanced gallium nitride half bridge chip, packaged in a 10 × 10mm LGA. This package integrates 6 high-performance HEMT devices and 3 driver chips, making it the most compact and efficient GaN solution in the industry.

The CT-2001A chip adopts a superscalar ASIC architecture, achieving multithreaded concurrency with latency below 20 nanoseconds. It features an integrated FOC analog computing unit, programmable digital filtering, neural network adaptive control, and an analog IDPU (Integral-Differential Processing Unit). With hardware acceleration, latency is as low as 0.2 nanoseconds (compared to 2.8 nanoseconds in traditional solutions). The chip includes 1MB on-chip Flash, 512KB SRAM, 21 digital communication interfaces, and built-in hardware acceleration engines for over 10 cryptographic algorithms, supporting secure features such as storage encryption, user partition protection, and secure boot.

5.6mm×7.8mm LGA-30pin 2 x GaN HEMT+1 x Half Bridge Driver Suitable for lightweight application scenarios

SMA镀金直母头座子公针-正脚-半螺纹-总长13.5*牙长8mm吸塑盘包装100PCS/盘 1000PCS/扎深圳金盐雾48小时电镀表面处理厚度：1U”

SMA镀镍直母头座子（母针）-全螺纹-偏脚-间距1.8mm-11牙 吸塑盘包装100PCS/盘 1000PCS/扎 盐雾48小时 电镀表面处理厚度：100U”

SMA镀镍弯公头6.08-公针 盐雾48小时 备注：压盖结构

SMA镀金弯公头公针-双尾巴网纹（SQ6.6*16.6*13.5*Φ6.1mm) 材质：黄铜 盐雾48小时 电镀表面处理厚度：1U” 备注：压盖结构

FAKRA-D型-紫色-蓝色卡子-长款（用于FAKRA母头）-老款偏大FAKRA

FAKRA-E型-绿色-蓝色卡子-长款 （用于FAKRA母头） 材质：CG20B 模具：1*4穴 单重：1.6G

FAKRA-F型-棕色-蓝色卡子-长款 （用于FAKRA母头） 材质：CG20B 模具：1*4穴 单重：1.6G

FAKRA-C型弯公头公针-插板座-蓝色-长款-焊脚镀镍(公司加工） 吸塑盘包装

FAKRA-A型-黑色-蓝色卡子-长款 （用于FAKRA母头） 材质：CG20B 模具：1*4穴 单重：1.6G