Fujitsu Semiconductor Memory Solution
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- MB85RS256BPNF-G-JNERE1
Memory
256-Kbit(32K × 8bit)，SPI接口，工作电压：2.7V to 3.6V
- MB85RS4MTYPF-G-BCERE1
Memory
MB85RS4MTYPF-G-BCERE1
- MB85RC16VPNF-G-AMERE2
Memory
MB85RC16VPNF-G-AMERE2
- MB85RS2MTYPNF-G-AWERE2
Memory
采用铁电工艺和硅栅CMOS工艺的SPI接口非易失性FRAM芯片，无需备用电池，读写耐久性高，低功耗
- MB85RS64VYPN-G-AMEWE1
Memory
采用铁电和硅栅CMOS工艺的SPI接口FRAM芯片，无需备用电池即可保存数据，读写次数多、写入周期短
- MB85RS4MTYPF-G-BCE1
Memory
MB85RS4MTYPF G BCE1
- MB85RS64TPNF-G-AMERE2
Memory
采用铁电和硅栅CMOS工艺的铁电随机存取存储器，支持SPI接口，读写耐久性高
- MB85RC1MTPNF-G-AMERE2
Memory
FeRAM是一种采用铁电工艺和硅栅CMOS工艺技术形成非易失性存储单元的芯片，配置为131,072字 × 8位。与SRAM不同，它无需使用数据备份电池即可保留数据。非易失性存储单元的读写耐久性提高到至少10¹³次循环，显著优于其他非易失性存储产品。写入内存后不需要像闪存或E²PROM那样的轮询序列。
- MB85RS64VYPNF-GS-BCERE1
Memory
MB85RS64VYPNF-GS-BCERE1
- MB85RS2MTYPNF-GS-AWERE2
Memory
MB85RS2MTYPNF-GS-AWERE2
- MB85RS128TYPNF-G-BCERE1
Memory
MB85RS128TYPNF-G-BCERE1
- MB85RC256VPNF-G-AMERE2
Memory
替代 MB85RC256VPNF-G-JNERE1 C47538
- MB85RC16PNF-G-AMERE2
Memory
MB85RC16PNF-G-AMERE2
- MB85RS4MTPF-G-JNERE2
Memory
MB85RS4MTPF-G-JNERE2
- MB85RC64APNF-G-JNERE1
Memory
- MB85RS128TYPNF-GS-BCERE1
Memory
- MB85RS2MTAPNF-G-BDE1
Memory
2M（256K × 8bit） SPI接口 1.8V ~ 3.6V
- MB85RS256TYPNF-GS-BCERE1
Memory
256-Kbit(32K × 8bit)，I2C接口，工作电压：2.7V to 5.5V
- MB85R1002ANC-GE1
Memory
- MB85R1001ANC-GE1
Memory
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