Results for1N5819UR-1

1N5819UR-1

DIODE SCHOTTKY 45V 1A DO213AB

DIODE SCHOTTKY 45V 1A DO213AB

DIODE SCHOTTKY 45V 1A DO213AB

DIODE SCHOTTKY 45V 1A DO213AB

This 1 Amp schottky barrier rectifier is metallurgically bonded and offers military grade qualifications for the part numbers of 1N5819UR-1 and 1N6761UR-1 for high-reliability applications. This small diode is hermetically sealed and bonded into a DO-213AB MELF glass package.

This 1 Amp schottky barrier rectifier is metallurgically bonded and offers military grade qualifications for the part numbers of 1N5819UR-1 and 1N6761UR-1 for high-reliability applications. This small diode is hermetically sealed and bonded into a DO-213AB MELF glass package.

This 1 Amp schottky barrier rectifier is metallurgically bonded and offers military grade qualifications for the part numbers of 1N5819UR-1 and 1N6761UR-1 for high-reliability applications. This small diode is hermetically sealed and bonded into a DO-213AB MELF glass package.

<p>This 1A Schottky barrier diode family is metallurgically bonded and offers military grade qualifications for high-reliability applications on “1N” prefixed numbers (1N5817-1,1N5819-1 and 1N6761-1), as well as "CDLL" and "DSB" prefixed numbers for packaged COTs components, "CD" prefixed for COTs die, "CDS" prefixed for JANS grade and "MNS" prefixed for Microchip New Space. This small diode is hermetically sealed with four levels of product assurance JAN, JANTX, JANTXV, JANS for the military grade encapsulated devices, as specified in MIL-PRF-19500/586 and two levels of product assurance provided for each unencapsulated device type, JANHC, AND JANKC. The device packages for the encapsulated device types are as follows: Axial leaded DO-204AL (formerly DO-41) and metal electrode leadless face (MELF) DO-213AB UR. This family of switching Schottky Diodes have an average rectifier output current (Io) of 1 Amp, with working peak reverse voltages (Vrwm) of 20V to 100V, and maximum reverse leakage currents (Ir) of 0.05mA to 0.10mA</p>

This 1 Amp schottky barrier rectifier is metallurgically bonded and offers military grade qualifications for the part numbers of 1N5819UR-1 and 1N6761UR-1 for high-reliability applications. This small diode is hermetically sealed and bonded into a DO-213AB MELF glass package.

<p>This 1A Schottky barrier diode family is metallurgically bonded and offers military grade qualifications for high-reliability applications on “1N” prefixed numbers (1N5817-1,1N5819-1 and 1N6761-1), as well as "CDLL" and "DSB" prefixed numbers for packaged COTs components, "CD" prefixed for COTs die, "CDS" prefixed for JANS grade and "MNS" prefixed for Microchip New Space. This small diode is hermetically sealed with four levels of product assurance JAN, JANTX, JANTXV, JANS for the military grade encapsulated devices, as specified in MIL-PRF-19500/586 and two levels of product assurance provided for each unencapsulated device type, JANHC, AND JANKC. The device packages for the encapsulated device types are as follows: Axial leaded DO-204AL (formerly DO-41) and metal electrode leadless face (MELF) DO-213AB UR. This family of switching Schottky Diodes have an average rectifier output current (Io) of 1 Amp, with working peak reverse voltages (Vrwm) of 20V to 100V, and maximum reverse leakage currents (Ir) of 0.05mA to 0.10mA</p>

<p>This 1A Schottky barrier diode family is metallurgically bonded and offers military grade qualifications for high-reliability applications on “1N” prefixed numbers (1N5817-1,1N5819-1 and 1N6761-1), as well as "CDLL" and "DSB" prefixed numbers for packaged COTs components, "CD" prefixed for COTs die, "CDS" prefixed for JANS grade and "MNS" prefixed for Microchip New Space. This small diode is hermetically sealed with four levels of product assurance JAN, JANTX, JANTXV, JANS for the military grade encapsulated devices, as specified in MIL-PRF-19500/586 and two levels of product assurance provided for each unencapsulated device type, JANHC, AND JANKC. The device packages for the encapsulated device types are as follows: Axial leaded DO-204AL (formerly DO-41) and metal electrode leadless face (MELF) DO-213AB UR. This family of switching Schottky Diodes have an average rectifier output current (Io) of 1 Amp, with working peak reverse voltages (Vrwm) of 20V to 100V, and maximum reverse leakage currents (Ir) of 0.05mA to 0.10mA</p>

<p>This 1A Schottky barrier diode family is metallurgically bonded and offers military grade qualifications for high-reliability applications on “1N” prefixed numbers (1N5817-1,1N5819-1 and 1N6761-1), as well as "CDLL" and "DSB" prefixed numbers for packaged COTs components, "CD" prefixed for COTs die, "CDS" prefixed for JANS grade and "MNS" prefixed for Microchip New Space. This small diode is hermetically sealed with four levels of product assurance JAN, JANTX, JANTXV, JANS for the military grade encapsulated devices, as specified in MIL-PRF-19500/586 and two levels of product assurance provided for each unencapsulated device type, JANHC, AND JANKC. The device packages for the encapsulated device types are as follows: Axial leaded DO-204AL (formerly DO-41) and metal electrode leadless face (MELF) DO-213AB UR. This family of switching Schottky Diodes have an average rectifier output current (Io) of 1 Amp, with working peak reverse voltages (Vrwm) of 20V to 100V, and maximum reverse leakage currents (Ir) of 0.05mA to 0.10mA</p>