Results for2SC3357
31 partsProduct search results31 total
- 2SC3357
Bipolar Transistors - Unspecified Type
- 2SC3357
Bipolar Transistors - Unspecified Type
- 2SC3357
Bipolar Transistors - Unspecified Type
2SC3357-RF 高频管采用双极硅外延工艺制造，具有高功率增益放大以及低噪声特性，大动 态范围，理想的电流线性； 主要应用于射频收发放大、超高频微波、VHF、UHF 和CATV 等产品上的高频宽 带低噪声放大器； 集电极-发射极击穿电压：BVCEO=15V，最大集电极电流：IC=150mA；最大 集电极耗散功率：PC=1200mW,特征频率：fT=7.5GHz；
- 2SC3357
Single Bipolar Transistors
Triode 2SC3357 RF
- 2SC3357
Single Bipolar Transistors
- 2SC3357
Single Bipolar Transistors
高频管 2SC3357
- 2SC3357
Single Bipolar Transistors
NPN Silicon Transistor
- 2SC3357
Single Bipolar Transistors
2SC3357 SOT-89双极晶体管
- 2SC3357-A
Transistors - Bipolar (BJT) - RF
RF TRANS NPN 12V 6.5GHZ SOT89
- 2SC3357-T1-A
Transistors - Bipolar (BJT) - RF
RF TRANS NPN 12V 6.5GHZ SOT89
- 2SC3357-T1-RF-A
Transistors - Bipolar (BJT) - RF
RF TRANS NPN 12V 6.5GHZ SOT89
- 2SC3357E
Single Bipolar Transistors
该NPN型三极管集电极电流为0.1A，集电极-发射极耐压12V，适用于低功率工作环境。其特征频率高达6500MHz，具备卓越的高频性能，适合用于高频信号放大与射频电路设计。直流电流放大系数HFE在120至270之间，增益范围宽且稳定性好，可有效支持小信号放大应用。该器件常用于无线通信模块、高频振荡电路、射频接收前端及各类便携式电子设备中的信号处理与放大功能，满足高频、低噪声电路的设计需求。【联系：sales@hxymos.com】
- 2SC3357U
Bipolar Transistors - Unspecified Type
- 2SC3357-E
Bipolar Transistors - Unspecified Type
- 2SC3357-E
Single Bipolar Transistors
12V,0.1A,General Purpose NPN Bipolar Transistor
- 2SC3357-F
Single Bipolar Transistors
12V,0.1A,General Purpose NPN Bipolar Transistor
- 2SC3357 RE
Bipolar Transistors - Unspecified Type
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