Results forC6D10065G

6 parts

Product search results6 total

  • C6D10065G

    Single Diodes

    DIODE SIL CARB 650V 36A TO263-2

    Datasheet14View details
  • C6D10065G

    Diodes - Rectifiers - Single

    DIODE SIL CARB 650V 36A TO263-2

    Datasheet1View details
  • C6D10065G

    Single Diodes

    碳化硅二极管是一款基于先进材料技术的半导体器件，其正向电流（IF）承载能力达10安培，反向重复峰值电压（VR）为650伏特，确保了在高压环境下的稳定运行。正向电压降（VF）低至1.3伏特，在保证高效导电的同时减少了能量损耗。该器件的反向漏电流（IR）仅为50微安，体现了其优异的绝缘性能。此外，它能承受高达80安培的瞬时峰值正向电流（IFSM），增强了应对突发电流冲击的能力。此款二极管适用于需要高效率和高可靠性的电路设计中，如电源转换、可再生能源系统及紧凑型电子设备等应用领域。

    Datasheet1View details
  • C6D10065G

    Single Diodes

    SiC肖特基二极管

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  • C6D10065G-TR

    Single Diodes

    DIODE SIL CARB 650V 36A TO263-2

    Datasheet1View details
  • C6D10065G-TR

    Diodes - Rectifiers - Single

    DIODE SIL CARB 650V 36A TO263-2

    Datasheet1View details
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