Results forLJ2333PT1G
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- LJ2333PT1G
Transistors - FETs, MOSFETs - Single
特性:P沟道,耐压为 -12V,连续漏极电流为 -6A,脉冲电流可达 -20A。LJ2333 采用先进的沟道技术和设计,提供优异的导通电阻(RDS(on))和低栅极电荷。应用:DC/DC 转换器、便携设备的负载开关、电池充放电保护电路或电池开关等。
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