Results forLJ6401PT1G
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- LJ6401PT1G
Transistors - FETs, MOSFETs - Single
特性：P沟道MOSFET，电压(VDS)：-12V，电流 (ID)：-4.3A (TA=25°C)，-3.4 A (TA=70°C)。超低导通电阻，开关速度快。低压负载开关特别适合低压逻辑直接驱动的负载开关，用于可穿戴设备、智能手机等。
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