Results forMBR20100CTF-G1-HXY
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- MBR20100CTF-G1-HXY
Single Diodes
该肖特基二极管采用1对共阴极配置,具备20A的平均正向电流(IF)和100V的反向重复峰值电压(VR)。其正向压降(VF)为0.85V,在100V反向电压下漏电流(IR)不超过100μA。器件可承受高达175A的正向浪涌电流(IFSM),适用于高频整流、开关电源以及需要低导通损耗的电路拓扑。共阴极结构便于多路输出设计中的连接与布局,有助于提升整体电路效率与可靠性。
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