Results forSI3434DV-T1-GE3-VB
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- SI3434DV-T1-GE3-VB
Transistors - FETs, MOSFETs - Single
台积电流片,长电科技封装;是一款单N沟道场效应管,具有小型封装和低功耗特性,采用Trench工艺制造。适用于小型电路控制和低功率应用的高性能MOSFET产品。SOT23-6;N—Channel沟道,30V;6A;RDS(ON)=23mΩ@VGS=10V,VGS=20V;Vth=0.5~1.5V;
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