ISOMICRON(安芯微半导体)Китай
6N137
ПроизводитсяThe 6N137 series combine an AlGaAs infrared emitting diode as the emitter which is optically coupled to a silicon high speed integrated photo-detector logic gate with a strobable output in a plastic DIP8 package with different lead forming options.
Все аналоги
Полный отчётТехнические параметры
| Питание | |
|---|---|
| Enable Voltage | V E | VCC+0.5 | V |
| Forward Current | I F | 25 | mA |
| Input Power Dissipation | P I | 100 | mW |
| Isolation Voltage | V iso | 5000 | Vrms | 3 |
| Output Current | I O | 50 | mA |
| Output Power Dissipation | P O | 85 | mW |
| Output Voltage | V O | 7 | V |
| Peak Forward Current | I FP | 50 | mA | 1 |
| Peak Transient Current | I F(trans) | 1 | A | 2 |
| Reverse Voltage | V R | 5 | V |
| Supply Voltage | V CC | 7 | V |
| Total Power Dissipation | P tot | 200 | mW |
| Условия эксплуатации и корпус | |
| Operating Temperature | T opr | - 40 ~100 | °C |
| Soldering Temperature | T sol | 260 | °C | 4 |
| Storage Temperature | T stg | -55~125 | °C |
| Другое | |
| Parameter | Symbol | Value | Unit | Note |