Results forWNSC2D04650
14 partsProduct search results14 total
- WNSC2D04650
Single Diodes
- WNSC2D04650D
Single Diodes
- WNSC2D04650T
Single Diodes
- WNSC2D04650Q
Single Diodes
DIODE SIL CARB 650V 4A TO220AC
- WNSC2D04650Q
Diodes - Rectifiers - Single
DIODE SIL CARB 650V 4A TO220AC
- WNSC2D04650DJ
Single Diodes
DIODE SIL CARBIDE 650V 4A DPAK
- WNSC2D04650DJ
Diodes - Rectifiers - Single
DIODE SIL CARBIDE 650V 4A DPAK
- WNSC2D04650TJ
Single Diodes
DIODE SIL CARBIDE 650V 4A 5DFN
- WNSC2D04650TJ
Diodes - Rectifiers - Single
DIODE SIL CARBIDE 650V 4A 5DFN
- WNSC2D04650XQ
Single Diodes
DIODE SIL CARBIDE 650V 4A TO220F
- WNSC2D04650XQ
Diodes - Rectifiers - Single
DIODE SIL CARBIDE 650V 4A TO220F
- WNSC2D04650Q-HXY
Single Diodes
该碳化硅二极管采用独立式结构，额定正向电流为4A，最大反向重复峰值电压达650V，典型正向压降为1.53V，在浪涌条件下可承受高达32A的非重复峰值正向电流。凭借碳化硅材料的特性，器件在高频、高温环境下展现出优异的稳定性和效率，适用于对开关速度和能效要求较高的电源转换、功率因数校正及各类高密度电力电子系统中。
- WNSC2D04650XQ-HXY
Single Diodes
该碳化硅二极管采用独立式结构，额定正向电流为4A，最大反向重复电压为650V，正向导通压降典型值为1.3V，具有较低的导通损耗。其非重复峰值正向浪涌电流能力达36A，能够有效应对短时过载情况。得益于碳化硅材料的物理特性，器件在高频工作和较高结温条件下仍可维持稳定电气性能，适用于高效率电源、功率因数校正电路及对能效和热管理有严格要求的电力电子系统。
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