Infineon TechnologiesГермания
LOW-NOISE SI TRANSISTOR
Все аналоги
Полный отчётТехнические параметры
| Питание | |
|---|---|
| Current - Collector (Ic) (Max) | 35mA |
| Power - Max | 210mW |
| Voltage - Collector Emitter Breakdown (Max) | 9V |
| Характеристики по постоянному и переменному току | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 90 @ 15mA, 3V |
| Frequency - Transition | 14GHz |
| Gain | 11.5dB ~ 16dB |
| Noise Figure (dB Typ @ f) | 1dB ~ 1.3dB @ 1.8GHz ~ 3GHz |
| Условия эксплуатации и корпус | |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C(TJ) |
| Package | Bulk |
| Package / Case | SC-101, SOT-883 |
| Supplier Device Package | PG-TSLP-3-1 |
| Другое | |
| Mfr | Infineon Technologies |
| Product Status | Active |
| Series | - |
| Transistor Type | NPN |