Results forIRF7341
23 partsProduct search results23 total
- IRF7341
Transistors - FETs, MOSFETs - Arrays
MOSFET ARRAY 2 N-CH 55V 4.7A SO-8
- IRF7341
Transistors - FETs, MOSFETs - Single
- IRF7341
Transistors - FETs, MOSFETs - Arrays
- IRF7341PBF
FET, MOSFET Arrays
MOSFET 2N-CH 55V 4.7A 8SO
- IRF7341PBF
Transistors - FETs, MOSFETs - Arrays
MOSFET 2N-CH 55V 4.7A 8-SOIC
- IRF7341TRPBF
FET, MOSFET Arrays
MOSFET 2N-CH 55V 4.7A 8SO
- IRF7341GTRPBF
Transistors - FETs, MOSFETs - Arrays
MOSFET N-CH 55V 5.1A
- IRF7341QTRPBF
FET, MOSFET Arrays
MOSFET 2N-CH 55V 5.1A 8-SOIC
- IRF7341QTRPBF
Transistors - FETs, MOSFETs - Arrays
MOSFET 2N-CH 55V 5.1A 8-SOIC
- IRF7341TR
Transistors - FETs, MOSFETs - Arrays
- IRF7341TR
Transistors - FETs, MOSFETs - Single
- IRF7341TRPBF
Transistors - FETs, MOSFETs - Arrays
MOSFET 2N-CH 55V 4.7A 8-SOIC
- IRF7341TRPBF
Transistors - FETs, MOSFETs - Single
- IRF7341TRPBF
Transistors - FETs, MOSFETs - Single
IC MOSFET DUAL N-CH 60V 7A SOP-8
- IRF7341GTRPBF
FET, MOSFET Arrays
MOSFET 2N-CH 55V 5.1A 8SO
- IRF7341PBF-HXY
Transistors - FETs, MOSFETs - Single
型号IRF7341PbF 的N+N沟道MOS管采用SOP-8封装，专为高效能、大电流应用设计。该器件的最大工作电压VDSS高达60V，连续电流ID能力为6.5A，胜任高压大电流环境下的稳定运行。导通电阻RD(on)低至32mR，有效减少功率损耗，提升系统整体能效。广泛应用于电源转换、电机驱动、逆变器等领域，是工程师追求高性能、节能解决方案的理想MOS管选择。
- IRF7341TR(UMW)
Transistors - FETs, MOSFETs - Single
- IRF7341TRPBF-VB
Transistors - FETs, MOSFETs - Single
台积电流片，长电科技封装；是一款双N+P沟道场效应晶体管，采用Trench工艺，适用于电源管理模块、汽车电子系统、工业机器人、变频器和PLC等控制系统模块、家用电器控制器、LED驱动器等领域。SOP8；2个N—Channel沟道,60V；6A；RDS(ON)=28mΩ@VGS=10V,VGS=20V；Vth=1.5~2.5V；
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