SIZ920DT-T1-GE3
FET, MOSFET ArraysMOSFET 2N-CH 30V 40A 8POWERPAIR
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Технические параметры
| Питание | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 40A |
| Drain to Source Voltage (Vdss) | 30V |
| Power - Max | 39W, 100W |
| Условия эксплуатации и корпус | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package / Case | 8-PowerWDFN |
| Supplier Device Package | 8-PowerPair® (6x5) |
| Другое | |
| Base Product Number | SIZ920 |
| Configuration | 2 N-Channel (Half Bridge) |
| FET Feature | - |
| Gate Charge (Qg) (Max) @ Vgs | 35nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1260pF @ 15V |
| Manufacturer | Vishay Siliconix |
| Packaging | Tape & Reel (TR) Cut Tape (CT) Digi-Reel® |
| Part Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 7.1mOhm @ 18.9A, 10V |
| Series | TrenchFET® |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |