氮化镓晶体管

Qorvo's TGF2023-2-02 is a discrete 2.5 mm GaN on SiC HEMT which operates from DC to 18 GHz. The TGF2023-2-02 typically provides 40.1 dBm of saturated output power with power gain of 21 dB at 3 GHz. The maximum power added efficiency is 73.3% which makes the TGF2023-2-02 appropriate for high efficiency applications. The part is lead-free and RoHS compliant. Typical Applications Broadband Wireless Military Space Product Categories Products> Discrete Transistors> GaN HEMTs Application Categories Applications> Defense & Aerospace> Communications Applications> Defense & Aerospace> Electronic Warfare Applications> Defense & Aerospace> Radar

CLF1G0060S-10