Results for2N7002DW
50+ partsProduct search results50+ total
- 2N7002DW
Transistors - FETs, MOSFETs - Arrays
MOSFET 2N-CH 60V 0.115A SC70-6
- 2N7002DW
Single FETs, MOSFETs
Dual N-Channel Enhancement Mode MOSFET
- 2N7002DW
Transistors - FETs, MOSFETs - Arrays
SOT-363 N 60V 0.34A Transistors
- 2N7002DW
Transistors - FETs, MOSFETs - Single
- 2N7002DW
Transistors - FETs, MOSFETs - Single
商品目录 场效应管(MOSFET)；类型 1个N沟道；漏源电压(Vdss) 60V；连续漏极电流(Id) 115mA；功率(Pd) 380mW；导通电阻(RDS(on)@Vgs,Id) 7.5Ω@10V,500mA；阈值电压(Vgs(th)@Id) 2V@250uA
- 2N7002DW
Transistors - FETs, MOSFETs - Single
这款消费级MOSFET采用SOT-363微型封装，内含双N沟道结构，额定电压高达60V，最大连续电流为0.1A，适用于低功率电子设备的精密电源管理和高效开关应用。其小巧尺寸与高性能设计提供了灵活且可靠的电路解决方案。
- 2N7002DW
Transistors - FETs, MOSFETs - Single
带ESD防护，2个N沟道，60V，0.3A，1.85Ω@10V；应用领域：开关电路、继电器、驱动器、高速信号线驱动、低边开关等。
- 2N7002DW
Transistors - FETs, MOSFETs - Single
- 2N7002DW
Transistors - FETs, MOSFETs - Single
- 2N7002DW
Transistors - FETs, MOSFETs - Single
- 2N7002DW
Transistors - FETs, MOSFETs - Single
MOS管 类型：2个N沟道 漏源电压(Vdss)：60V 连续漏极电流(Id)：300mA 功率(Pd)：280mW 导通电阻(RDS(on)@Vgs,Id)：1.8Ω@10V,300mA
- 2N7002DW
Transistors - FETs, MOSFETs - Single
N沟MOS管
- 2N7002DW
Transistors - FETs, MOSFETs - Single
- 2N7002DW
Transistors - FETs, MOSFETs - Single
- 2N7002DW
Transistors - FETs, MOSFETs - Single
小电流MOSFET产品，两个N沟道，耐压：60V，电流：0.23A, Rdson：1100mR
- 2N7002DW
Transistors - FETs, MOSFETs - Single
- 2N7002DW
Transistors - FETs, MOSFETs - Single
2N7002DW
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